IRF3205PBF IR MOSFET N-CH 55V 110A TO220AB

The IRF3205PBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. Here are its key specifications:

IRF3205PBF

  • Part Number: IRF3205PBF
  • Transistor Polarity: N-Channel
  • Drain-Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 110A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
  • Vgs (Max): ±20V
  • Mounting Type: Through Hole
  • Package / Case: TO-220AB
  • Supplier Device Package: TO-220AB
  • Operating Temperature: -55°C ~ 175°C (TJ)

Description:

The IRF3205PBF is an N-Channel Power MOSFET designed for high-power, general-purpose applications. When a positive voltage is applied to the gate relative to the source, the N-Channel MOSFET conducts.

Application:

N-Channel MOSFETs are widely used in applications requiring high current capability, such as power supplies, motor control, high-power DC-DC converters, and other electronic systems where low on-state resistance, high current capability, and fast switching speeds are crucial.

Package:

The TO-220AB package allows for through-hole mounting and is suitable for discrete semiconductors, offering ease of mounting to printed circuit boards or heat sinks.

Features:

  • High Drain-Source Voltage: Suitable for applications requiring a higher voltage capacity.
  • Low On-State Resistance: Minimizes power dissipation and enhances power efficiency.
  • High Current Capability: Capable of handling very high currents, making it suitable for high-power applications.

As always, it's essential to carefully review the datasheet and consider your project's specific requirements to ensure this MOSFET is suitable for your application.

DataSheet IRF3205PBF PDF

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