IRF540NPBF IR MOSFET N-CH 100V 33A TO220AB

The IRF540NPBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. Below are the key specifications for this component:

IRF540NPBF

  • Part Number: IRF540NPBF
  • Transistor Polarity: N-Channel
  • Drain-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 33A
  • Rds On (Max) @ Id, Vgs: 0.077 Ohm @ 17A, 10V
  • Vgs (Max): ±20V
  • Mounting Type: Through Hole
  • Package / Case: TO-220AB
  • Supplier Device Package: TO-220AB
  • Operating Temperature: -55°C ~ 175°C (TJ)

Description:

The IRF540NPBF is an N-Channel Power MOSFET designed for general-purpose power switching applications. The N-Channel MOSFET conducts when a positive voltage is applied to the gate relative to the source.

Application:

N-Channel MOSFETs are widely used in applications such as power supplies, motor control, battery management, switching regulators, and other electronic systems where low on-state resistance, high current capability, and fast switching speeds are crucial.

Package:

The TO-220AB package is a commonly used through-hole mounting style for discrete semiconductors. This package facilitates easy and reliable mounting to printed circuit boards or heat sinks.

Features:

  • High Drain-Source Voltage: Suitable for applications requiring a higher voltage capacity.
  • Low On-State Resistance: Minimizes power dissipation and enhances power efficiency.
  • High Current Capability: Capable of handling high currents, making it suitable for a wide range of power applications.

It's important to thoroughly review the datasheet and consider your project's specific requirements to ensure this MOSFET is appropriate for your application.

DataSheet IRF540NPBF PDF

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