MT3S113P(TE12L,F)

MT3S113P(TE12L,F)

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Manufacturer Part MT3S113P(TE12L,F)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - RF
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet MT3S113P(TE12L,F) PDF

Availability

InStock 1,818
UnitPrice $ 0.99000

MT3S113P(TE12L,F) Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

MT3S113P(TE12L,F) Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.3V
Frequency - Transition:7.7GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:10.5dB
Power - Max:1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI

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