DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1

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Manufacturer Part DF200R12W1H3B27BOMA1
Manufacturer IR (Infineon Technologies)
Description IGBT MOD 1200V 30A 375W
Category Discrete Semiconductor Products
Family Transistors - IGBTs - Modules
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet DF200R12W1H3B27BOMA1 PDF

Availability

InStock 56,302
UnitPrice $ 54.61750

DF200R12W1H3B27BOMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

DF200R12W1H3B27BOMA1 Specifications

Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):30 A
Power - Max:375 W
Vce(on) (Max) @ Vge, Ic:1.3V @ 15V, 30A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:2 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module

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Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

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