FQNL2N50BTA

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Manufacturer Part	FQNL2N50BTA
Manufacturer	Rochester Electronics
Description	POWER FIELD-EFFECT TRANSISTOR, 0
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	FQNL2N50BTA PDF

Availability

InStock	20,000
UnitPrice	$ 0.21000

FQNL2N50BTA Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

FQNL2N50BTA Specifications

Type	Description
Series:	QFET®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id:	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	230 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 Long Body (Formed Leads)

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.