SIHB12N50E-GE3

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Manufacturer Part	SIHB12N50E-GE3
Manufacturer	Vishay / Siliconix
Description	MOSFET N-CH 500V 10.5A D2PAK
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	SIHB12N50E-GE3 PDF

Availability

InStock	12
UnitPrice	$ 2.50000

SIHB12N50E-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SIHB12N50E-GE3 Specifications

Type	Description
Series:	-
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	50 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	886 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	114W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.