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| Manufacturer Part | SIHG33N65E-GE3 |
|---|---|
| Manufacturer | Vishay / Siliconix |
| Description | MOSFET N-CH 650V 32.4A TO247AC |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Lifecycle: | New from this manufacturer. |
| Delivery: | DHL FedEx Ups TNT EMS |
| Payment | T/T Paypal Visa MoneyGram Western Union |
| DataSheet | SIHG33N65E-GE3 PDF |
| InStock | 843 |
|---|---|
| UnitPrice | $ 7.18000 |
SIHG33N65E-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 32.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 105mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 173 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4040 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 313W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247AC |
| Package / Case: | TO-247-3 |
We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.
We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.
TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.
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