G2R1000MT17D

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Manufacturer Part	G2R1000MT17D
Manufacturer	GeneSiC Semiconductor
Description	SIC MOSFET N-CH 4A TO247-3
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	G2R1000MT17D PDF

Availability

InStock	267,553
UnitPrice	$ 4.86000

G2R1000MT17D Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

G2R1000MT17D Specifications

Type	Description
Series:	G2R™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:	139 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	53W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

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