IPD50N08S413ATMA1

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Manufacturer Part	IPD50N08S413ATMA1
Manufacturer	IR (Infineon Technologies)
Description	MOSFET N-CH 80V 50A TO252-3
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPD50N08S413ATMA1 PDF

Availability

InStock	376,108
UnitPrice	$ 1.24000

IPD50N08S413ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPD50N08S413ATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	13.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	4V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1711 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	72W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3-313
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Shopping Guide

Shipping Rate

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