SI8816EDB-T2-E1

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Manufacturer Part	SI8816EDB-T2-E1
Manufacturer	Vishay / Siliconix
Description	MOSFET N-CH 30V 4MICROFOOT
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	SI8816EDB-T2-E1 PDF

Availability

InStock	31,728
UnitPrice	$ 0.56000

SI8816EDB-T2-E1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SI8816EDB-T2-E1 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8 nC @ 10 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	195 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-Microfoot
Package / Case:	4-XFBGA

Shopping Guide

Shipping Rate

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